Micrometre-scale refrigerators

A superconductor with a gap in the density of states or a quantum dot with discrete energy levels is a central building block in realizing an electronic on-chip cooler. They can work as energy filters, allowing only hot quasiparticles to tunnel out from the electrode to be cooled. This principle has been employed experimentally since the early 1990s in investigations and demonstrations of micrometre-scale coolers at sub-kelvin temperatures. In this paper, we review the basic experimental conditions in realizing the coolers and the main practical issues that are known to limit their performance. We give an update of experiments performed on cryogenic micrometre-scale coolers in the past five years

High-fidelity adiabatic inversion of a 31P^{31}\mathrm{P} electron spin qubit in natural silicon

The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses. We achieve an inversion fidelity of 97%, and we observe signatures in the spin resonance spectra and the spin coherence time that are consistent with the presence of an additional exchange-coupled donor. This work highlights the effectiveness of adiabatic inversion techniques for spin control in fluctuating environments.Comment: 4 pages, 2 figure

Bell's inequality violation with spins in silicon

Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagged as a single-number benchmark for the performance of quantum computing devices. Here we demonstrate deterministic, on-demand generation of two-qubit entangled states of the electron and the nuclear spin of a single phosphorus atom embedded in a silicon nanoelectronic device. By sequentially reading the electron and the nucleus, we show that these entangled states violate the Bell/CHSH inequality with a Bell signal of 2.50(10). An even higher value of 2.70(9) is obtained by mapping the parity of the two-qubit state onto the nuclear spin, which allows for high-fidelity quantum non-demolition measurement (QND) of the parity. Furthermore, we complement the Bell inequality entanglement witness with full two-qubit state tomography exploiting QND measurement, which reveals that our prepared states match the target maximally entangled Bell states with $>$96\% fidelity. These experiments demonstrate complete control of the two-qubit Hilbert space of a phosphorus atom, and show that this system is able to maintain its simultaneously high initialization, manipulation and measurement fidelities past the single-qubit regime.Comment: 10 pages, 3 figures, 1 table, 4 extended data figure

Electrically controlling single spin qubits in a continuous microwave field

Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electric field, which induces a Stark shift of the qubit energies. This method, known as A-gate control, preserves the excellent coherence times and gate fidelities of isolated spins, and can be extended to arbitrarily many qubits without requiring multiple microwave sources.Comment: Main paper: 13 pages, 4 figures. Supplementary information: 25 pages, 13 figure

Roadmap on quantum nanotechnologies

Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon

Strain effects in phosphorous bound exciton transitions in silicon

Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it decays. This transition has been extensively studied in bulk, but in order to scale towards localized spin readout, microfabricated structures are needed for detection. As these electrodes will inevitably cause strain in the silicon lattice, it will be crucial to understand how strain affects the exciton transitions. Here we study the phosphorous donor bound exciton transitions in silicon using hybrid electro-optical readout with microfabricated electrodes. We observe a significant zero-field splitting as well mixing of the hole states due to strain. We can model these effects assuming the known asymmetry of the hole g-factors and the Pikus-Bir Hamiltonian describing the strain. In addition, we describe the laser power, electric-field and light polarization dependence of the transitions. Importantly, the hole-mixing should not prevent donor electron spin readout and using our measured parameters and numerical simulations we anticipate that hybrid spin readout in a silicon-on-insulator platform should be possible, allowing integration to silicon photonics platforms.Comment: 7 pages, 9 figure

The effects of ion implantation damage to photonic crystal optomechanical resonators in silicon

Optomechanical resonators were fabricated on a silicon-on-insulator substrate that had been implanted with phosphorus donors. The resonators' mechanical and optical properties were then measured (at 6 K and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechanical frequencies increased. This is consistent with crystal lattice damage from the ion implantation causing the optical and mechanical properties to degrade and then subsequently being repaired by the annealing. We explain these effects qualitatively with changes in the silicon crystal lattice structure. We also report on some unexplained features in the pre-anneal samples. In addition, we report partial fabrication of optomechanical resonators with neon ion milling.peerReviewe

State Preparation and Tomography of a Nanomechanical Resonator with Fast Light Pulses

Pulsed optomechanical measurements enable squeezing, nonclassical state creation, and backaction-free sensing. We demonstrate pulsed measurement of a cryogenic nanomechanical resonator with record precision close to the quantum regime. We use these to prepare thermally squeezed and purified conditional mechanical states, and to perform full state tomography. These demonstrations exploit large vacuum optomechanical coupling in a nanophotonic cavity to reach a single-pulse imprecision of 9 times the mechanical zero-point amplitude xzpf. We study the effect of other mechanical modes that limit the conditional state width to 58xzpf, and show how decoherence causes the state to grow in time.peerReviewe